We demonstrate a new self-aligned TFT process for hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's). Two backside exposure photolithography steps are used to fabricate fully self-aligned tri-layer TFT's with deposited n + contacts. Since no critical data alignment is required, this simple process is well suited to fabrication of short channel TFT's. We have fabricated fully self-aligned tri-layer a-Si:H TFT's with excellent device performance, and contact overlaps <1 μm. For a 20-μm channel length TFT with an a-Si:H thickness of 13 nm, the linear region (V DS = 0.1 V) and saturation region (V DS = 25 V) extrinsic mobility values are both 1.2 cm 2/V-s, the off currents are <1 pA, and the on/off current ratio is >10 7.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Apr 1998|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering