Fundamental differences between thick and thin oxides subjected to high electric fields

William L. Warren, Patrick M. Lenahan

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a "trivalent silicon" trapped hole center, termed E'; in stressed thin oxides no E' centers were detected. We believe that our results indicate the absence of impact ionization in stressed thin oxides.

Original languageEnglish (US)
Pages (from-to)4305-4308
Number of pages4
JournalJournal of Applied Physics
Volume62
Issue number10
DOIs
StatePublished - Dec 1 1987

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oxides
electric fields
ionization
silicon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Fundamental differences between thick and thin oxides subjected to high electric fields. / Warren, William L.; Lenahan, Patrick M.

In: Journal of Applied Physics, Vol. 62, No. 10, 01.12.1987, p. 4305-4308.

Research output: Contribution to journalArticle

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