Fundamental differences between thick and thin oxides subjected to high electric fields

William L. Warren, Patrick M. Lenahan

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Abstract

We observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a "trivalent silicon" trapped hole center, termed E'; in stressed thin oxides no E' centers were detected. We believe that our results indicate the absence of impact ionization in stressed thin oxides.

Original languageEnglish (US)
Pages (from-to)4305-4308
Number of pages4
JournalJournal of Applied Physics
Volume62
Issue number10
DOIs
StatePublished - Dec 1 1987

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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