Fundamental differences in the nature of electrically active point-defects in plasma enhanced chemical vapor deposited and thermal oxide structures

William L. Warren, Patrick M. Lenahan

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have investigated plasma enhanced chemical vapor deposited (PECVD) and thermal oxides using electron spin resonance (ESR). We have been able to show that electron injection into PECVD oxides results in the generation of neutral E′ centers. The E′ center is an unpaired electron on a silicon backbonded to three oxygens. However, in thermal oxides, E′ centers are generated by hole injection, not electron injection; thermal oxide E′ centers are positively charged. Thus, there are fundamental differences in the point-defects in thermally grown and PECVD oxides.

Original languageEnglish (US)
Pages (from-to)406-411
Number of pages6
JournalApplied Surface Science
Volume39
Issue number1-4
DOIs
StatePublished - Jan 1 1989

Fingerprint

Point defects
Oxides
point defects
Vapors
vapors
Plasmas
oxides
Electron injection
injection
electrons
Silicon
Paramagnetic resonance
electron paramagnetic resonance
Hot Temperature
Oxygen
Electrons
silicon
oxygen

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

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abstract = "We have investigated plasma enhanced chemical vapor deposited (PECVD) and thermal oxides using electron spin resonance (ESR). We have been able to show that electron injection into PECVD oxides results in the generation of neutral E′ centers. The E′ center is an unpaired electron on a silicon backbonded to three oxygens. However, in thermal oxides, E′ centers are generated by hole injection, not electron injection; thermal oxide E′ centers are positively charged. Thus, there are fundamental differences in the point-defects in thermally grown and PECVD oxides.",
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AU - Lenahan, Patrick M.

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N2 - We have investigated plasma enhanced chemical vapor deposited (PECVD) and thermal oxides using electron spin resonance (ESR). We have been able to show that electron injection into PECVD oxides results in the generation of neutral E′ centers. The E′ center is an unpaired electron on a silicon backbonded to three oxygens. However, in thermal oxides, E′ centers are generated by hole injection, not electron injection; thermal oxide E′ centers are positively charged. Thus, there are fundamental differences in the point-defects in thermally grown and PECVD oxides.

AB - We have investigated plasma enhanced chemical vapor deposited (PECVD) and thermal oxides using electron spin resonance (ESR). We have been able to show that electron injection into PECVD oxides results in the generation of neutral E′ centers. The E′ center is an unpaired electron on a silicon backbonded to three oxygens. However, in thermal oxides, E′ centers are generated by hole injection, not electron injection; thermal oxide E′ centers are positively charged. Thus, there are fundamental differences in the point-defects in thermally grown and PECVD oxides.

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