Fundamentals of the reaction-diffusion process in model EUV photoresists

Kristopher A. Lavery, Kwang Woo Choi, Bryan Vogt, Vivek M. Prabhu, Eric K. Lin, Wen Li Wu, Sushil K. Satija, Michael J. Leeson, Heidi B. Cao, George Thompson, Hai Deng, David S. Fryer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For extreme ultraviolet (EUV) resists, control of line width roughness (LWR) and high resist sensitivity are key requirements for their success. The observed LWR and CD values result from many factors in interdependent processing steps. One of these factors is the deprotection interface formed during the post-exposure bake (PEB) step. We use model EUV photoresist polymers to systematically address the influence of exposure-dose on the spatial evolution of the deprotection reaction at a model line edge for fixed PEB time using neutron reflectivity. The bilayer consists of an acid feeder layer containing photoacid generator (PAG) and a model photoresist polymer, poly(hydroxystyrene- co-/tert/-butylacrylate) with perdeuterated t-butyl protecting group. The deuterium labeling allows the protection profile to be measured with nanometer resolution. The evolution of two length scales that contribute to the compositional profile is discussed.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Technology and Processing XXIII
DOIs
StatePublished - Jul 10 2006
EventAdvances in Resist Technology and Processing XXIII - San JOse, CA, United States
Duration: Feb 20 2006Feb 22 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6153 I
ISSN (Print)0277-786X

Conference

ConferenceAdvances in Resist Technology and Processing XXIII
CountryUnited States
CitySan JOse, CA
Period2/20/062/22/06

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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