Further developments in surface imaging resists

Donald W. Johnson, Roderick R. Kunz, Mark W. Horn

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

At present one of the most promising production-worthy 193 nm resist approaches is a single layer, dry developed, surface imaging, silylation process. An evaluation of commercially available developmental resists shows excellent process versatility and lithographic performance. An evaluation of silylation conditions shows more versatility than previously demonstrated. No flow is seen in silylated features, leading to excellent dimensional control and edge profiles. Preliminary results indicate better than 0.18 μm resolution and linearity to 0.20 μm without the use of phase shift masks. Geometries of 0.1 μm have been demonstrated in a resist process which is available for evaluation of 0.20 μm devices processes as well as 256MB DRAM circuits.

Original languageEnglish (US)
Pages (from-to)593-600
Number of pages8
JournalJournal of Photopolymer Science and Technology
Volume6
Issue number4
DOIs
StatePublished - Jan 1 1993

All Science Journal Classification (ASJC) codes

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

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