Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells

N. A. Estrich, D. H. Hook, A. N. Smith, J. T. Leonard, B. Laughlin, Jon-Paul Maria

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. % Ga doping and exhibited ∼90% transmission, with resistivity in the 1 × 10-3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.

Original languageEnglish (US)
Article number233703
JournalJournal of Applied Physics
Volume113
Issue number23
DOIs
StatePublished - Jun 21 2013

Fingerprint

antireflection coatings
solar cells
conduction
electrical resistivity
electric contacts
emitters
thin films
electromagnetic absorption
transmission lines
pulsed laser deposition
gallium
silver
wafers
silicon
synthesis

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Estrich, N. A. ; Hook, D. H. ; Smith, A. N. ; Leonard, J. T. ; Laughlin, B. ; Maria, Jon-Paul. / Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 23.
@article{61bd44c532854cbe97e2fc92c22d4c3c,
title = "Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells",
abstract = "Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. {\%} Ga doping and exhibited ∼90{\%} transmission, with resistivity in the 1 × 10-3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.",
author = "Estrich, {N. A.} and Hook, {D. H.} and Smith, {A. N.} and Leonard, {J. T.} and B. Laughlin and Jon-Paul Maria",
year = "2013",
month = "6",
day = "21",
doi = "10.1063/1.4811538",
language = "English (US)",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells. / Estrich, N. A.; Hook, D. H.; Smith, A. N.; Leonard, J. T.; Laughlin, B.; Maria, Jon-Paul.

In: Journal of Applied Physics, Vol. 113, No. 23, 233703, 21.06.2013.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Ga-doped ZnO conducting antireflection coatings for crystalline silicon solar cells

AU - Estrich, N. A.

AU - Hook, D. H.

AU - Smith, A. N.

AU - Leonard, J. T.

AU - Laughlin, B.

AU - Maria, Jon-Paul

PY - 2013/6/21

Y1 - 2013/6/21

N2 - Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. % Ga doping and exhibited ∼90% transmission, with resistivity in the 1 × 10-3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.

AB - Transparent, conductive gallium-doped ZnO thin films are evaluated for application as conducting antireflection coatings (ARC) for crystalline silicon solar cells as a means to enhance efficiency by reducing the overall resistivity of the photovoltaic circuit. All Ga-doped ZnO thin films in this study were deposited using pulsed laser deposition. Synthesis conditions were first optimized for maximum electrical resistivity and minimal visible light absorption. The ideal combination contained 1 mol. % Ga doping and exhibited ∼90% transmission, with resistivity in the 1 × 10-3 ohm-cm range. Optimized films were prepared on reference flat silicon wafers with known dopant densities and on commercially obtained solar cell emitters without ARCs. Circular transmission line method measurements were used to measure specific contact resistivity (ρc). For n-type doped solar cell emitters, contact resistivity values of 0.1 mΩ cm2 were observed repeatedly. These values are consistent with, or lower than, contact resistivities associated with conventional silver paste metallization.

UR - http://www.scopus.com/inward/record.url?scp=84880843225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880843225&partnerID=8YFLogxK

U2 - 10.1063/1.4811538

DO - 10.1063/1.4811538

M3 - Article

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 23

M1 - 233703

ER -