Gaas interfaces with octadecyl thiol self-assembled monolayer: Structural and electrical properties

O. S. Nakagawa; S. Ashok; C. W. Sheen; J. Martensson; D. L. Allara

doi:10.1143/JJAP.30.3759

Gaas interfaces with octadecyl thiol self-assembled monolayer: Structural and electrical properties

O. S. Nakagawa, S. Ashok, C. W. Sheen, J. Martensson, D. L. Allara

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92 Scopus citations

Abstract

A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)i7SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans- planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM’s enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.

Original language	English (US)
Pages (from-to)	3759-3762
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.30.3759
State	Published - Dec 1991

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Gaas interfaces with octadecyl thiol self-assembled monolayer: Structural and electrical properties",

abstract = "A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)i7SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans- planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM{\textquoteright}s enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.",

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year = "1991",

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T1 - Gaas interfaces with octadecyl thiol self-assembled monolayer

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AU - Nakagawa, O. S.

AU - Ashok, S.

AU - Sheen, C. W.

AU - Martensson, J.

AU - Allara, D. L.

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AB - A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)i7SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans- planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM’s enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.

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