TY - JOUR
T1 - Gaas interfaces with octadecyl thiol self-assembled monolayer
T2 - Structural and electrical properties
AU - Nakagawa, O. S.
AU - Ashok, S.
AU - Sheen, C. W.
AU - Martensson, J.
AU - Allara, D. L.
PY - 1991/12
Y1 - 1991/12
N2 - A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)i7SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans- planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM’s enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.
AB - A passivation layer on chemically etched (100) GaAs surface was synthesized with octadecyl thiol, CH3(CH2)i7SH, and its structural and electrical properties were investigated. The layer is a self-assembled monolayer (SAM) in all-trans- planar-zig-zag conformation and is the first conformationally ordered SAM on any semiconductor surface. The barrier height of GaAs Schottky diodes can be modified by the octadecyl thiol SAM passivation without sacrificing good diode characteristics. Octadecyl and other alkane thiol SAM’s enable introduction of a nano-scale, controlled structure on a GaAs surface and prove useful in an assessing the GaAs surface electrical properties.
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U2 - 10.1143/JJAP.30.3759
DO - 10.1143/JJAP.30.3759
M3 - Article
AN - SCOPUS:84866654986
VL - 30
SP - 3759
EP - 3762
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -