(Ga,In)P nanowires grown without intentional catalyst

Carolina F. Cerqueira, Bartolomeu C. Viana, Cleanio Da Luz-Lima, Nestor Perea-Lopez, Mauricio Terrones, Eduardo H.L. Falcão, Anderson S.L. Gomes, Remi Chassagnon, André L. Pinto, Luiz C. Sampaio, Marco Sacilotti

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H53Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga1-yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.

Original languageEnglish (US)
Pages (from-to)72-78
Number of pages7
JournalJournal of Crystal Growth
Volume431
DOIs
StatePublished - Dec 1 2015

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Nanowires
nanowires
catalysts
Catalysts
reactors
wool
Light emission
Metallorganic chemical vapor deposition
Organometallics
Vapor pressure
Wool
vapor pressure
metalorganic chemical vapor deposition
light emission
chambers
Gases
Color
color
gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Cerqueira, C. F., Viana, B. C., Luz-Lima, C. D., Perea-Lopez, N., Terrones, M., Falcão, E. H. L., ... Sacilotti, M. (2015). (Ga,In)P nanowires grown without intentional catalyst. Journal of Crystal Growth, 431, 72-78. https://doi.org/10.1016/j.jcrysgro.2015.08.009
Cerqueira, Carolina F. ; Viana, Bartolomeu C. ; Luz-Lima, Cleanio Da ; Perea-Lopez, Nestor ; Terrones, Mauricio ; Falcão, Eduardo H.L. ; Gomes, Anderson S.L. ; Chassagnon, Remi ; Pinto, André L. ; Sampaio, Luiz C. ; Sacilotti, Marco. / (Ga,In)P nanowires grown without intentional catalyst. In: Journal of Crystal Growth. 2015 ; Vol. 431. pp. 72-78.
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abstract = "We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H53Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga1-yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.",
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Cerqueira, CF, Viana, BC, Luz-Lima, CD, Perea-Lopez, N, Terrones, M, Falcão, EHL, Gomes, ASL, Chassagnon, R, Pinto, AL, Sampaio, LC & Sacilotti, M 2015, '(Ga,In)P nanowires grown without intentional catalyst', Journal of Crystal Growth, vol. 431, pp. 72-78. https://doi.org/10.1016/j.jcrysgro.2015.08.009

(Ga,In)P nanowires grown without intentional catalyst. / Cerqueira, Carolina F.; Viana, Bartolomeu C.; Luz-Lima, Cleanio Da; Perea-Lopez, Nestor; Terrones, Mauricio; Falcão, Eduardo H.L.; Gomes, Anderson S.L.; Chassagnon, Remi; Pinto, André L.; Sampaio, Luiz C.; Sacilotti, Marco.

In: Journal of Crystal Growth, Vol. 431, 01.12.2015, p. 72-78.

Research output: Contribution to journalArticle

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T1 - (Ga,In)P nanowires grown without intentional catalyst

AU - Cerqueira, Carolina F.

AU - Viana, Bartolomeu C.

AU - Luz-Lima, Cleanio Da

AU - Perea-Lopez, Nestor

AU - Terrones, Mauricio

AU - Falcão, Eduardo H.L.

AU - Gomes, Anderson S.L.

AU - Chassagnon, Remi

AU - Pinto, André L.

AU - Sampaio, Luiz C.

AU - Sacilotti, Marco

PY - 2015/12/1

Y1 - 2015/12/1

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AB - We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ((C2H53Ga), used as Ga source, is transported by the N2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga1-xInxP/Ga1-yInyP interfaces (x≠y) is proposed to explain this efficient light emission mechanism.

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