Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

Y. G. Wang, S Ashok

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.

Original languageEnglish (US)
Pages (from-to)461-465
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume39
Issue number1-4
DOIs
StatePublished - Mar 2 1989

Fingerprint

Gallium arsenide
nitrogen ions
Ion bombardment
Ion implantation
gallium
Surface treatment
ion implantation
bombardment
Argon
argon
Nitrogen
ions
shunts
energy
Ions
dosage
causes
Compensation and Redress

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation. / Wang, Y. G.; Ashok, S.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 39, No. 1-4, 02.03.1989, p. 461-465.

Research output: Contribution to journalArticle

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