Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation

Y. G. Wang, S. Ashok

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

An investigation of GaAs surface modification under ion bombardment has been carried out using low-energy (10 keV) Ar and N ion implantation and studying the electrical characteristics of subsequently formed Schottky barrier devices. The GaAs surface barrier is altered for ion doses as low as 1012 cm-2 and the barrier is found to decrease for n-GaAs and increase for p-GaAs under bombardment from either implant species. The ion bombardment is also found to cause significant carrier compensation, resulting in series resistance and shunt conductance.

Original languageEnglish (US)
Pages (from-to)461-465
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume39
Issue number1-4
DOIs
StatePublished - Mar 2 1989

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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