Gallium-induced milling of silicon: A computational investigation of focused ion beams

Michael F. Russo, Mostafa Maazouz, Lucille A. Giannuzzi, Clive Chandler, Mark Utlaut, Barbara J. Garrison

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Molecular dynamics simulations are performed to model milling via a focused ion beam (FIB). The goal of this investigation is to examine the fundamental dynamics associated with the use of FIBs, as well as the phenomena that govern the early stages of trench formation during the milling process. Using a gallium beam to bombard a silicon surface, the extent of lateral damage (atomic displacement) caused by the beam at incident energies of both 2 and 30 keV is examined. These simulations indicate that the lateral damage is several times larger than the beam itself and that the mechanism responsible for the formation of a V-shaped trench is due to both the removal of surface material, and the lateral and horizontal migration of subsurface silicon atoms toward the vacuum/crater interface. The results presented here provide complementary information to experimental images of trenches created during milling with FIBs.

Original languageEnglish (US)
Pages (from-to)315-320
Number of pages6
JournalMicroscopy and Microanalysis
Volume14
Issue number4
DOIs
StatePublished - Aug 1 2008

Fingerprint

Focused ion beams
Gallium
gallium
ion beams
Silicon
silicon
damage
Molecular dynamics
Vacuum
craters
Atoms
Computer simulation
simulation
molecular dynamics
vacuum
atoms
energy

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Russo, M. F., Maazouz, M., Giannuzzi, L. A., Chandler, C., Utlaut, M., & Garrison, B. J. (2008). Gallium-induced milling of silicon: A computational investigation of focused ion beams. Microscopy and Microanalysis, 14(4), 315-320. https://doi.org/10.1017/S1431927608080653
Russo, Michael F. ; Maazouz, Mostafa ; Giannuzzi, Lucille A. ; Chandler, Clive ; Utlaut, Mark ; Garrison, Barbara J. / Gallium-induced milling of silicon : A computational investigation of focused ion beams. In: Microscopy and Microanalysis. 2008 ; Vol. 14, No. 4. pp. 315-320.
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Russo, MF, Maazouz, M, Giannuzzi, LA, Chandler, C, Utlaut, M & Garrison, BJ 2008, 'Gallium-induced milling of silicon: A computational investigation of focused ion beams', Microscopy and Microanalysis, vol. 14, no. 4, pp. 315-320. https://doi.org/10.1017/S1431927608080653

Gallium-induced milling of silicon : A computational investigation of focused ion beams. / Russo, Michael F.; Maazouz, Mostafa; Giannuzzi, Lucille A.; Chandler, Clive; Utlaut, Mark; Garrison, Barbara J.

In: Microscopy and Microanalysis, Vol. 14, No. 4, 01.08.2008, p. 315-320.

Research output: Contribution to journalArticle

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