Gamma irradiation insensitivity of gaas schottky diodes

S. Ashok, J. M. Borrego, R. J. Gutmann

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Guarded Al- and Au-nGaAs Schottky barrier diodes were subjected to Co60-ray irradiation and their electrical characteristics evaluated. These GaAs Schottkys did not exhibit significant change in their I-V and C-V characteristics up to an absorbed dose as high as 1.5 x 107 rads. Diodes that were previously neutron-irradiated with consequent degradation were also subjected to Co60 irradiation, but no synergistic changes were observed.

Original languageEnglish (US)
Pages (from-to)999-1000
Number of pages2
JournalIEEE Transactions on Nuclear Science
Volume25
Issue number2
DOIs
StatePublished - Apr 1978

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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