Gamma-ray irradiation of ZnO thin film transistors and circuits

Dalong Zhao, Devin A. Mourey, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The radiation tolerance of electronic devices and circuits is of interest for space and some other harsh environment applications. Properly designed deep submicron gate length Si MOSFETs can have small threshold voltage shift and leakage increase for doses of 100 kGy (10 Mrad) or even larger [1], however polysilicon thin film transistors (TFTs) show significant changes at much lower dose < 1 kGy) [2] and a-Si:H TFTs have volt-range threshold voltage shift for 10 kGy dose [3]. We report here the effects of gamma-ray irradiation on plasma enhanced atomic layer deposition (PEALD) ZnO TFTs and circuits. Devices and circuits function even after 1 MGy 60Co gamma ray exposure and radiation induced device changes are removed by a modest temperature (200°C) anneal.

Original languageEnglish (US)
Title of host publication68th Device Research Conference, DRC 2010
Pages241-242
Number of pages2
DOIs
StatePublished - Oct 11 2010
Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
Duration: Jun 21 2010Jun 23 2010

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other68th Device Research Conference, DRC 2010
CountryUnited States
CityNotre Dame, IN
Period6/21/106/23/10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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