GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors

Chun San Chu, Yugang Zhou, Rongming Chu, Kevin Jing Chen, Kei May Lau

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

Abstract

The first demonstration of radio-frequency Planar Inter-Digitated Metal-Insulator-Semiconductor (PIDMIS) Varactors fabricated on AlGaN/GaN heterostructures is reported. The PIDMIS varactors achieved good quality factor (Q-factor) and tuning range. The Q-factor of PIDMIS varactors is discussed based on a physical equivalent circuit, which takes into account the capacitance of the active channel, fixed insulator capacitance, parasitic resistances and leakage current through substrate. The experimental data shows that for identical substrate structure, the quality factor varies with different design parameters.

Original languageEnglish (US)
Pages2257-2260
Number of pages4
StatePublished - Dec 1 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: Oct 18 2004Oct 21 2004

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
Country/TerritoryChina
CityBeijing
Period10/18/0410/21/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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