GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction

Jutong Liu, Dan Zhi, J. M. Redwing, M. A. Tischler, T. F. Kuech

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Spatially resolved photoluminescence measurements from GaN films were achieved using a near-field scanning optical microscope (NSOM). We have studied GaN films grown by metalorganic vapor phase epitaxy on sapphire substrates. Spatial scans of topography, band-edge and yellow luminescence have been performed with submicron spatial resolution. Spatial variations in the photoluminescence characteristics are clearly observed at the submicron scale. Measurements by atomic force microscopy and high resolution X-ray diffraction were also performed and compared with the NSOM measurements.

Original languageEnglish (US)
Pages (from-to)357-361
Number of pages5
JournalJournal of Crystal Growth
Volume170
Issue number1-4
DOIs
StatePublished - Jan 1997

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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