TY - GEN
T1 - Gan mos structures with low interface trap density
AU - Chu, Rongming
N1 - Publisher Copyright:
© 2021 Trans Tech Publications Ltd, Switzerland.
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021
Y1 - 2021
N2 - GaN based electronic devices have gained great success in the arena of high-frequency and high-power applications. A high-quality GaN MOS structure has the potential to enable new device designs and higher device performance, thereby bringing the success of GaN electronics to a new level. This paper discusses results of the work on GaN MOS structures show that with adequate surface preparation samples featuring interface trap density down to the ~ 1010 eV-1cm-2 range can be formed.
AB - GaN based electronic devices have gained great success in the arena of high-frequency and high-power applications. A high-quality GaN MOS structure has the potential to enable new device designs and higher device performance, thereby bringing the success of GaN electronics to a new level. This paper discusses results of the work on GaN MOS structures show that with adequate surface preparation samples featuring interface trap density down to the ~ 1010 eV-1cm-2 range can be formed.
UR - http://www.scopus.com/inward/record.url?scp=85102012350&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85102012350&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.314.79
DO - 10.4028/www.scientific.net/SSP.314.79
M3 - Conference contribution
AN - SCOPUS:85102012350
SN - 9783035738018
T3 - Solid State Phenomena
SP - 79
EP - 83
BT - Ultra Clean Processing of Semiconductor Surfaces XV - Selected peer-reviewed full text papers from the 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
A2 - Mertens, Paul W.
A2 - Wostyn, Kurt
A2 - Meuris, Marc
A2 - Heyns, Marc
PB - Trans Tech Publications Ltd
T2 - 15th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2021
Y2 - 12 April 2021 through 15 April 2021
ER -