TY - GEN
T1 - GaN power electronics for automotive application
AU - Boutros, Karim S.
AU - Chu, Rongming
AU - Hughes, Brian
PY - 2012/11/12
Y1 - 2012/11/12
N2 - Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in automotive power switching applications. With its projected 100x performance advantage over silicon, GaN is a game changing technology for power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the remaining challenges facing the technology.
AB - Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in automotive power switching applications. With its projected 100x performance advantage over silicon, GaN is a game changing technology for power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the remaining challenges facing the technology.
UR - http://www.scopus.com/inward/record.url?scp=84868530821&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84868530821&partnerID=8YFLogxK
U2 - 10.1109/EnergyTech.2012.6304646
DO - 10.1109/EnergyTech.2012.6304646
M3 - Conference contribution
AN - SCOPUS:84868530821
SN - 9781467318365
T3 - 2012 IEEE Energytech, Energytech 2012
BT - 2012 IEEE Energytech, Energytech 2012
T2 - 2012 IEEE Energytech, Energytech 2012
Y2 - 29 May 2012 through 31 May 2012
ER -