GaN power electronics for automotive application

Karim S. Boutros, Rongming Chu, Brian Hughes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

25 Scopus citations

Abstract

Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in automotive power switching applications. With its projected 100x performance advantage over silicon, GaN is a game changing technology for power electronics. This paper reviews the advantages of GaN material and devices, the performance of these devices in power circuits, and the remaining challenges facing the technology.

Original languageEnglish (US)
Title of host publication2012 IEEE Energytech, Energytech 2012
DOIs
StatePublished - Nov 12 2012
Event2012 IEEE Energytech, Energytech 2012 - Cleveland, OH, United States
Duration: May 29 2012May 31 2012

Publication series

Name2012 IEEE Energytech, Energytech 2012

Conference

Conference2012 IEEE Energytech, Energytech 2012
CountryUnited States
CityCleveland, OH
Period5/29/125/31/12

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All Science Journal Classification (ASJC) codes

  • Energy Engineering and Power Technology
  • Fuel Technology

Cite this

Boutros, K. S., Chu, R., & Hughes, B. (2012). GaN power electronics for automotive application. In 2012 IEEE Energytech, Energytech 2012 [6304646] (2012 IEEE Energytech, Energytech 2012). https://doi.org/10.1109/EnergyTech.2012.6304646