GaN Super-Heterojunction Schottky Barrier Diode with over 10 kV Blocking Voltage

Sang Woo Han, Jianan Song, Rongming Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, we present GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with over 10 kV blocking voltage. Charge imbalance between the n-type delta doping and the p-type doping was adjusted by N+ implantation. This device structure enabled scaling of breakdown voltage to over 10 kV and with an on-resistance of 1054 \Omega \cdot\text{mm.

Original languageEnglish (US)
Title of host publication2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728181769
DOIs
StatePublished - Apr 8 2021
Event5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, China
Duration: Apr 8 2021Apr 11 2021

Publication series

Name2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

Conference

Conference5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Country/TerritoryChina
CityChengdu
Period4/8/214/11/21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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