Gas flow effects in synthesis of diamond by hot-filament chemical vapor deposition

Jogender Singh, M. Vellaikal, Ravi Dat

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Hot-filament chemical vapor deposition was employed to study the effect of gas flow dynamics on diamond growth. The density and growth rate of diamond within the patterned region of copper and silicon substrates was found to be twice as large as compared with that on a flat (unpatterned) surface. The density of diamond nucleation increased on patterned silicon and copper substrates with an increase in the methane concentration from 1.0% to 1.5% in the gas mixture of methane and hydrogen (CH4 + H2). Selective growth of diamond was achieved without using diamond seed or paste, or scratching the patterned silicon substate. About 90% diamond coverage and a continuous diamond film (75 μm) were achieved on the square-patterned silicon and copper substrates, respectively, at a methane concentration of 1.5%. The growth of diamond within the wells was discussed on the basis of gas flow dynamics. The present analysis is consistent with available theoretical models.

Original languageEnglish (US)
Pages (from-to)133-140
Number of pages8
JournalThin Solid Films
Volume238
Issue number1
DOIs
StatePublished - Jan 15 1994

Fingerprint

Diamond
gas flow
Flow of gases
Chemical vapor deposition
Diamonds
filaments
diamonds
vapor deposition
Silicon
synthesis
Methane
Copper
methane
silicon
copper
Substrates
Diamond films
Ointments
diamond films
Gas mixtures

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Singh, Jogender ; Vellaikal, M. ; Dat, Ravi. / Gas flow effects in synthesis of diamond by hot-filament chemical vapor deposition. In: Thin Solid Films. 1994 ; Vol. 238, No. 1. pp. 133-140.
@article{0350ea0db6ab41b3a8cdf7a9a27893a0,
title = "Gas flow effects in synthesis of diamond by hot-filament chemical vapor deposition",
abstract = "Hot-filament chemical vapor deposition was employed to study the effect of gas flow dynamics on diamond growth. The density and growth rate of diamond within the patterned region of copper and silicon substrates was found to be twice as large as compared with that on a flat (unpatterned) surface. The density of diamond nucleation increased on patterned silicon and copper substrates with an increase in the methane concentration from 1.0{\%} to 1.5{\%} in the gas mixture of methane and hydrogen (CH4 + H2). Selective growth of diamond was achieved without using diamond seed or paste, or scratching the patterned silicon substate. About 90{\%} diamond coverage and a continuous diamond film (75 μm) were achieved on the square-patterned silicon and copper substrates, respectively, at a methane concentration of 1.5{\%}. The growth of diamond within the wells was discussed on the basis of gas flow dynamics. The present analysis is consistent with available theoretical models.",
author = "Jogender Singh and M. Vellaikal and Ravi Dat",
year = "1994",
month = "1",
day = "15",
doi = "10.1016/0040-6090(94)90663-7",
language = "English (US)",
volume = "238",
pages = "133--140",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

Gas flow effects in synthesis of diamond by hot-filament chemical vapor deposition. / Singh, Jogender; Vellaikal, M.; Dat, Ravi.

In: Thin Solid Films, Vol. 238, No. 1, 15.01.1994, p. 133-140.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gas flow effects in synthesis of diamond by hot-filament chemical vapor deposition

AU - Singh, Jogender

AU - Vellaikal, M.

AU - Dat, Ravi

PY - 1994/1/15

Y1 - 1994/1/15

N2 - Hot-filament chemical vapor deposition was employed to study the effect of gas flow dynamics on diamond growth. The density and growth rate of diamond within the patterned region of copper and silicon substrates was found to be twice as large as compared with that on a flat (unpatterned) surface. The density of diamond nucleation increased on patterned silicon and copper substrates with an increase in the methane concentration from 1.0% to 1.5% in the gas mixture of methane and hydrogen (CH4 + H2). Selective growth of diamond was achieved without using diamond seed or paste, or scratching the patterned silicon substate. About 90% diamond coverage and a continuous diamond film (75 μm) were achieved on the square-patterned silicon and copper substrates, respectively, at a methane concentration of 1.5%. The growth of diamond within the wells was discussed on the basis of gas flow dynamics. The present analysis is consistent with available theoretical models.

AB - Hot-filament chemical vapor deposition was employed to study the effect of gas flow dynamics on diamond growth. The density and growth rate of diamond within the patterned region of copper and silicon substrates was found to be twice as large as compared with that on a flat (unpatterned) surface. The density of diamond nucleation increased on patterned silicon and copper substrates with an increase in the methane concentration from 1.0% to 1.5% in the gas mixture of methane and hydrogen (CH4 + H2). Selective growth of diamond was achieved without using diamond seed or paste, or scratching the patterned silicon substate. About 90% diamond coverage and a continuous diamond film (75 μm) were achieved on the square-patterned silicon and copper substrates, respectively, at a methane concentration of 1.5%. The growth of diamond within the wells was discussed on the basis of gas flow dynamics. The present analysis is consistent with available theoretical models.

UR - http://www.scopus.com/inward/record.url?scp=0028319462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028319462&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(94)90663-7

DO - 10.1016/0040-6090(94)90663-7

M3 - Article

AN - SCOPUS:0028319462

VL - 238

SP - 133

EP - 140

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -