Gas-phase surface processing prior to 3.2 nm gate oxidation

J. Ruzyllo, E. Röhr, M. Baeyens, T. Bearda, P. Mertens, M. Heyns

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The pre-gate oxidation processing of Si surfaces involving an SCI clcan followed by a sequence of gas-phase low pressure exposures to AHF/methanol, UV/Cl2, and UV/Q2is investigated. A comparison with a wet clean shows inferior performance of the dry chemistries in terms of Ca removal and surface roughness (Rms= 0.07 nm and 0.31 respectively). In spite of these apparent deficiencies the 3.2 nm thick gate oxides grown on dry cleaned surfaces arc displaying electrical characteristics, particularly charge-to-breakdown, comparable to oxides grown on the wet cleaned surfaces. The possible reasons for this effect arc considered.

Original languageEnglish (US)
Title of host publicationUltra Clean Processing of Silicon Surfaces
EditorsMarc Heyns, Marc Meuris, Paul Mertens
PublisherTrans Tech Publications Ltd
Pages85-88
Number of pages4
ISBN (Print)9783908450405
DOIs
StatePublished - Jan 1 1999
Event4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 1998 - Ostend, Belgium
Duration: Sep 21 1998Sep 23 1998

Publication series

NameSolid State Phenomena
Volume65-66
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces, UCPSS 1998
CountryBelgium
CityOstend
Period9/21/989/23/98

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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