Gas-phase surface processing prior to 3.2 nm gate oxidation

Jerzy Ruzyllo, E. Rohr, M. Baeyens, T. Bearda, P. Mertens, M. Heyns

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The pre-gate oxidation processing of Si surfaces involving an SC1 clean followed by a sequence of gas-phase low pressure exposures to AHF/methanol, UV/Cl2, and UV/O2 is investigated. A comparison with a wet clean shows inferior performance of the dry chemistries in terms of Ca removal and surface roughness (Rms = 0.07 nm and 0.31 respectively). In spite of these apparent deficiencies the 3.2 nm thick gate oxides grown on dry cleaned surfaces are displaying electrical characteristics, particularly charge-to-breakdown, comparable to oxides grown on the wet cleaned surfaces. The possible reasons for this effect are considered.

Original languageEnglish (US)
Pages (from-to)85-88
Number of pages4
JournalDiffusion and Defect Data Pt.B: Solid State Phenomena
Volume65-66
StatePublished - 1999

Fingerprint

Gases
vapor phases
Oxidation
Oxides
oxidation
Processing
oxides
Methanol
surface roughness
roughness
methyl alcohol
low pressure
breakdown
Surface roughness
chemistry

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Ruzyllo, J., Rohr, E., Baeyens, M., Bearda, T., Mertens, P., & Heyns, M. (1999). Gas-phase surface processing prior to 3.2 nm gate oxidation. Diffusion and Defect Data Pt.B: Solid State Phenomena, 65-66, 85-88.
Ruzyllo, Jerzy ; Rohr, E. ; Baeyens, M. ; Bearda, T. ; Mertens, P. ; Heyns, M. / Gas-phase surface processing prior to 3.2 nm gate oxidation. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 1999 ; Vol. 65-66. pp. 85-88.
@article{f1542113e0bb42048778808ea5900d93,
title = "Gas-phase surface processing prior to 3.2 nm gate oxidation",
abstract = "The pre-gate oxidation processing of Si surfaces involving an SC1 clean followed by a sequence of gas-phase low pressure exposures to AHF/methanol, UV/Cl2, and UV/O2 is investigated. A comparison with a wet clean shows inferior performance of the dry chemistries in terms of Ca removal and surface roughness (Rms = 0.07 nm and 0.31 respectively). In spite of these apparent deficiencies the 3.2 nm thick gate oxides grown on dry cleaned surfaces are displaying electrical characteristics, particularly charge-to-breakdown, comparable to oxides grown on the wet cleaned surfaces. The possible reasons for this effect are considered.",
author = "Jerzy Ruzyllo and E. Rohr and M. Baeyens and T. Bearda and P. Mertens and M. Heyns",
year = "1999",
language = "English (US)",
volume = "65-66",
pages = "85--88",
journal = "Solid State Phenomena",
issn = "1012-0394",
publisher = "Scientific.net",

}

Ruzyllo, J, Rohr, E, Baeyens, M, Bearda, T, Mertens, P & Heyns, M 1999, 'Gas-phase surface processing prior to 3.2 nm gate oxidation', Diffusion and Defect Data Pt.B: Solid State Phenomena, vol. 65-66, pp. 85-88.

Gas-phase surface processing prior to 3.2 nm gate oxidation. / Ruzyllo, Jerzy; Rohr, E.; Baeyens, M.; Bearda, T.; Mertens, P.; Heyns, M.

In: Diffusion and Defect Data Pt.B: Solid State Phenomena, Vol. 65-66, 1999, p. 85-88.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gas-phase surface processing prior to 3.2 nm gate oxidation

AU - Ruzyllo, Jerzy

AU - Rohr, E.

AU - Baeyens, M.

AU - Bearda, T.

AU - Mertens, P.

AU - Heyns, M.

PY - 1999

Y1 - 1999

N2 - The pre-gate oxidation processing of Si surfaces involving an SC1 clean followed by a sequence of gas-phase low pressure exposures to AHF/methanol, UV/Cl2, and UV/O2 is investigated. A comparison with a wet clean shows inferior performance of the dry chemistries in terms of Ca removal and surface roughness (Rms = 0.07 nm and 0.31 respectively). In spite of these apparent deficiencies the 3.2 nm thick gate oxides grown on dry cleaned surfaces are displaying electrical characteristics, particularly charge-to-breakdown, comparable to oxides grown on the wet cleaned surfaces. The possible reasons for this effect are considered.

AB - The pre-gate oxidation processing of Si surfaces involving an SC1 clean followed by a sequence of gas-phase low pressure exposures to AHF/methanol, UV/Cl2, and UV/O2 is investigated. A comparison with a wet clean shows inferior performance of the dry chemistries in terms of Ca removal and surface roughness (Rms = 0.07 nm and 0.31 respectively). In spite of these apparent deficiencies the 3.2 nm thick gate oxides grown on dry cleaned surfaces are displaying electrical characteristics, particularly charge-to-breakdown, comparable to oxides grown on the wet cleaned surfaces. The possible reasons for this effect are considered.

UR - http://www.scopus.com/inward/record.url?scp=0032776711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032776711&partnerID=8YFLogxK

M3 - Article

VL - 65-66

SP - 85

EP - 88

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1012-0394

ER -