Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors

Qing Cao, Minggang Xia, Coskun Kocabas, Moonsub Shim, John A. Rogers, Slava V. Rotkin

Research output: Contribution to journalArticle

146 Citations (Scopus)

Abstract

The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.

Original languageEnglish (US)
Article number023516
JournalApplied Physics Letters
Volume90
Issue number2
DOIs
StatePublished - Jan 22 2007

Fingerprint

transistors
capacitance
carbon nanotubes
thin films
spacing
nanotubes
electrostatics
tubes
electrodes
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cao, Qing ; Xia, Minggang ; Kocabas, Coskun ; Shim, Moonsub ; Rogers, John A. ; Rotkin, Slava V. / Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors. In: Applied Physics Letters. 2007 ; Vol. 90, No. 2.
@article{3766ff2115674e08bfc6d4f0a0ac8c0a,
title = "Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors",
abstract = "The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.",
author = "Qing Cao and Minggang Xia and Coskun Kocabas and Moonsub Shim and Rogers, {John A.} and Rotkin, {Slava V.}",
year = "2007",
month = "1",
day = "22",
doi = "10.1063/1.2431465",
language = "English (US)",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors. / Cao, Qing; Xia, Minggang; Kocabas, Coskun; Shim, Moonsub; Rogers, John A.; Rotkin, Slava V.

In: Applied Physics Letters, Vol. 90, No. 2, 023516, 22.01.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gate capacitance coupling of singled-walled carbon nanotube thin-film transistors

AU - Cao, Qing

AU - Xia, Minggang

AU - Kocabas, Coskun

AU - Shim, Moonsub

AU - Rogers, John A.

AU - Rotkin, Slava V.

PY - 2007/1/22

Y1 - 2007/1/22

N2 - The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.

AB - The electrostatic coupling between singled-walled carbon nanotube (SWCNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite-element modeling. The computed capacitance depends on both the thickness of the gate dielectric and the average spacing between the tubes, with some dependence on the distribution of these spacings. Experiments on transistors that use submonolayer, random networks of SWCNTs verify certain aspects of these calculations. The results are important for the development of networks or arrays of nanotubes as active layers in TFTs and other electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=33846227905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846227905&partnerID=8YFLogxK

U2 - 10.1063/1.2431465

DO - 10.1063/1.2431465

M3 - Article

AN - SCOPUS:33846227905

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023516

ER -