Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects

Seon Woo Lee, Vyacheslav Rotkin, Andrei Sirenko, Daniel Lopez, Avi Kornblit, Haim Grebel

Research output: Contribution to journalConference article


Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.

Original languageEnglish (US)
Pages (from-to)173-177
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - Nov 20 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 1 2008Dec 5 2008


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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