Gate leakage current: A sensitive characterization parameter for plasmainduced damage detection in ultrathin oxide submicron transistors

J. Jiang, Osama O. Awadelkarim, J. Werking

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2 Citations (Scopus)

Abstract

We report the results of experiments performed to study plasma-induced damage in ultrathin gate oxide of metal-oxide-semiconductor field-effect transistors (MOSFETs). The transistors used were 0.35 μm «-channel MOSFETs with «£65-Á-ťhick gate oxides fabricated on 200 mm p/p + boron-doped silicon substrates using a full complementary metal-oxide-semiconductor flow up to and including metal 2 processes. Our results show that threshold voltage, maximum transconductance, and subthreshold swing as well as charge pumping current became ineffective in discerning charging damage in these thin oxide MOSFETs. In contrast, gate leakage current l g, measured at a gate-to-substrate voltage of 2 V, is shown to emerge as the more sensitive damage indicator in this case. The sensitivity of I g is attributed to trap-assisted direct tunneling which is enhanced by decreasing oxide thickness. The sensitivity of l g in probing charging damage is demonstrated using special MOSFET structures that utilize charge antennas at the polycrystalline silicon gate definition etch, contact etch, and metal etch steps.

Original languageEnglish (US)
Pages (from-to)1664-1669
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume16
Issue number3
DOIs
StatePublished - Dec 1 1998

Fingerprint

Damage detection
MOSFET devices
Leakage currents
Oxides
Transistors
leakage
transistors
metal oxide semiconductors
damage
field effect transistors
oxides
Metals
charging
Boron
Transconductance
Silicon
Substrates
Threshold voltage
Polysilicon
sensitivity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Gate leakage current: A sensitive characterization parameter for plasmainduced damage detection in ultrathin oxide submicron transistors",
abstract = "We report the results of experiments performed to study plasma-induced damage in ultrathin gate oxide of metal-oxide-semiconductor field-effect transistors (MOSFETs). The transistors used were 0.35 μm «-channel MOSFETs with «£65-{\'A}-ťhick gate oxides fabricated on 200 mm p/p + boron-doped silicon substrates using a full complementary metal-oxide-semiconductor flow up to and including metal 2 processes. Our results show that threshold voltage, maximum transconductance, and subthreshold swing as well as charge pumping current became ineffective in discerning charging damage in these thin oxide MOSFETs. In contrast, gate leakage current l g, measured at a gate-to-substrate voltage of 2 V, is shown to emerge as the more sensitive damage indicator in this case. The sensitivity of I g is attributed to trap-assisted direct tunneling which is enhanced by decreasing oxide thickness. The sensitivity of l g in probing charging damage is demonstrated using special MOSFET structures that utilize charge antennas at the polycrystalline silicon gate definition etch, contact etch, and metal etch steps.",
author = "J. Jiang and Awadelkarim, {Osama O.} and J. Werking",
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N2 - We report the results of experiments performed to study plasma-induced damage in ultrathin gate oxide of metal-oxide-semiconductor field-effect transistors (MOSFETs). The transistors used were 0.35 μm «-channel MOSFETs with «£65-Á-ťhick gate oxides fabricated on 200 mm p/p + boron-doped silicon substrates using a full complementary metal-oxide-semiconductor flow up to and including metal 2 processes. Our results show that threshold voltage, maximum transconductance, and subthreshold swing as well as charge pumping current became ineffective in discerning charging damage in these thin oxide MOSFETs. In contrast, gate leakage current l g, measured at a gate-to-substrate voltage of 2 V, is shown to emerge as the more sensitive damage indicator in this case. The sensitivity of I g is attributed to trap-assisted direct tunneling which is enhanced by decreasing oxide thickness. The sensitivity of l g in probing charging damage is demonstrated using special MOSFET structures that utilize charge antennas at the polycrystalline silicon gate definition etch, contact etch, and metal etch steps.

AB - We report the results of experiments performed to study plasma-induced damage in ultrathin gate oxide of metal-oxide-semiconductor field-effect transistors (MOSFETs). The transistors used were 0.35 μm «-channel MOSFETs with «£65-Á-ťhick gate oxides fabricated on 200 mm p/p + boron-doped silicon substrates using a full complementary metal-oxide-semiconductor flow up to and including metal 2 processes. Our results show that threshold voltage, maximum transconductance, and subthreshold swing as well as charge pumping current became ineffective in discerning charging damage in these thin oxide MOSFETs. In contrast, gate leakage current l g, measured at a gate-to-substrate voltage of 2 V, is shown to emerge as the more sensitive damage indicator in this case. The sensitivity of I g is attributed to trap-assisted direct tunneling which is enhanced by decreasing oxide thickness. The sensitivity of l g in probing charging damage is demonstrated using special MOSFET structures that utilize charge antennas at the polycrystalline silicon gate definition etch, contact etch, and metal etch steps.

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