Gate leakage current: A sensitive characterization parameter for plasmainduced damage detection in ultrathin oxide submicron transistors

J. Jiang, Osama O. Awadelkarim, J. Werking

Research output: Contribution to journalArticle

2 Scopus citations

Fingerprint Dive into the research topics of 'Gate leakage current: A sensitive characterization parameter for plasmainduced damage detection in ultrathin oxide submicron transistors'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy