Gate length related transfer characteristics of GaN-based high electron mobility transistors

X. F. Zhang, L. Wei, L. Wang, J. Liu, J. Xu

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The measured drain current of GaN high electron mobility transistor (HEMT) shows a saturated characteristic as gate bias increases. HEMTs with short gate length have drain currents saturate more readily as compared to long gate length. In this paper, the relationship between drain currents saturation and gate bias was analyzed by using a simple series resistance model and was also validated by two-dimensional device simulation. The effects of these saturated transfer characteristics on electron mobility extraction of GaN HEMT were evaluated. Furthermore, the possible extension of GaN HEMT to logic inverter by utilizing the feature of saturation was also discussed.

Original languageEnglish (US)
Article number113501
JournalApplied Physics Letters
Volume102
Issue number11
DOIs
StatePublished - Mar 18 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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