Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

S. A. Suliman, O. O. Awadelkarim, R. S. Ridley, G. M. Dolny

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

Original languageEnglish (US)
Pages (from-to)247-252
Number of pages6
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
StatePublished - Apr 1 2004
EventProceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain
Duration: Jun 18 2003Jun 20 2003

Fingerprint

Silicon oxides
Oxides
metal oxides
Metals
Deep level transient spectroscopy
oxides
Interface states
silicon
Transistors
Electric fields
Degradation
Defects
pumping
transistors
degradation
electric fields
defects
spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.",
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T1 - Gate-oxide grown on the sidewalls and base of a U-shaped Si trench

T2 - Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

AU - Suliman, S. A.

AU - Awadelkarim, O. O.

AU - Ridley, R. S.

AU - Dolny, G. M.

PY - 2004/4/1

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N2 - We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

AB - We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

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