Gate-oxide grown on the sidewalls and base of a U-shaped Si trench: Effects of the oxide and oxide/Si interface condition on the properties of vertical MOS devices

S. A. Suliman, O. O. Awadelkarim, R. S. Ridley, G. M. Dolny

Research output: Contribution to journalConference article

4 Scopus citations


We report on the SiO2/Si interface condition and on its high electric field stress reliability in U-shaped trench gated metal-oxide-silicon (MOS) structures. The interface state density measured is ∼1011 eV-1 cm-2, and using deep level transient spectroscopy the Pb center is found to be the dominant interface defect. The degradation induced by electrical stressing is examined using changes in the charge pumping current in a U-trench-gated transistor. It is shown that the SiO2/Si interface at the bottom corners of the trench is the weakest region in the MOS structure.

Original languageEnglish (US)
Pages (from-to)247-252
Number of pages6
JournalMicroelectronic Engineering
Issue number1-4
StatePublished - Apr 1 2004
EventProceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain
Duration: Jun 18 2003Jun 20 2003


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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