Gate recessing of GaN MESFETs using photoelectrochemical wet etching

A. T. Ping, D. Selvanathan, C. Youtsey, E. Piner, Joan Marie Redwing, I. Adesida

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.

Original languageEnglish (US)
Pages (from-to)2140-2141
Number of pages2
JournalElectronics Letters
Volume35
Issue number24
DOIs
StatePublished - Nov 25 1999

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Gate recessing of GaN MESFETs using photoelectrochemical wet etching'. Together they form a unique fingerprint.

  • Cite this

    Ping, A. T., Selvanathan, D., Youtsey, C., Piner, E., Redwing, J. M., & Adesida, I. (1999). Gate recessing of GaN MESFETs using photoelectrochemical wet etching. Electronics Letters, 35(24), 2140-2141. https://doi.org/10.1049/el:19991341