Gate recessing of GaN MESFETs using photoelectrochemical wet etching

A. T. Ping, D. Selvanathan, C. Youtsey, E. Piner, Joan Marie Redwing, I. Adesida

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

For the first time GaN-based MESFETs which have been recessed using a wet etching process are presented. Photoelectrochemical etching was used to recess openings through the heavily-doped n-GaN cap and into the n-GaN channel. The DC and RF characteristics of recessed-gate GaN MESFETs are presented.

Original languageEnglish (US)
Pages (from-to)2140-2141
Number of pages2
JournalElectronics Letters
Volume35
Issue number24
DOIs
StatePublished - Nov 25 1999

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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