Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

Nathaniel Gillgren, Darshana Wickramaratne, Yanmeng Shi, Tim Espiritu, Jiawei Yang, Jin Hu, Jiang Wei, Xue Liu, Zhiqiang Mao, Kenji Watanabe, Takashi Taniguchi, Marc Bockrath, Yafis Barlas, Roger K. Lake, Chun Ning Lau

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN(hBN) heterostructures with one-dimensional edge contacts. These transistors are stable in ambient conditions for <300 h, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 cm2 V-1 s-1. At low temperatures, we observe gate-tunable Shubnikov de Haas magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor∼2. The cyclotron mass of few-layer phosphorene (FLP) holes is determined to increase from 0.25 to 0.31me as the Fermi level moves towards the valence band edge. Our results underscore the potential of FLP as both a platform for novel 2D physics and an electronic material for semiconductor applications.

Original languageEnglish (US)
Article numberA1
Journal2D Materials
Volume2
Issue number1
DOIs
StatePublished - Dec 19 2015

Fingerprint

Heterojunctions
Semiconductor materials
oscillations
Metal insulator transition
air
Cyclotrons
Valence bands
Air
Fermi level
Phosphorus
Transistors
Energy gap
Physics
Magnetic fields
Fabrication
cyclotrons
phosphorus
transistors
platforms
insulators

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Gillgren, N., Wickramaratne, D., Shi, Y., Espiritu, T., Yang, J., Hu, J., ... Lau, C. N. (2015). Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. 2D Materials, 2(1), [A1]. https://doi.org/10.1088/2053-1583/2/1/011001
Gillgren, Nathaniel ; Wickramaratne, Darshana ; Shi, Yanmeng ; Espiritu, Tim ; Yang, Jiawei ; Hu, Jin ; Wei, Jiang ; Liu, Xue ; Mao, Zhiqiang ; Watanabe, Kenji ; Taniguchi, Takashi ; Bockrath, Marc ; Barlas, Yafis ; Lake, Roger K. ; Lau, Chun Ning. / Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. In: 2D Materials. 2015 ; Vol. 2, No. 1.
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Gillgren, N, Wickramaratne, D, Shi, Y, Espiritu, T, Yang, J, Hu, J, Wei, J, Liu, X, Mao, Z, Watanabe, K, Taniguchi, T, Bockrath, M, Barlas, Y, Lake, RK & Lau, CN 2015, 'Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures', 2D Materials, vol. 2, no. 1, A1. https://doi.org/10.1088/2053-1583/2/1/011001

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures. / Gillgren, Nathaniel; Wickramaratne, Darshana; Shi, Yanmeng; Espiritu, Tim; Yang, Jiawei; Hu, Jin; Wei, Jiang; Liu, Xue; Mao, Zhiqiang; Watanabe, Kenji; Taniguchi, Takashi; Bockrath, Marc; Barlas, Yafis; Lake, Roger K.; Lau, Chun Ning.

In: 2D Materials, Vol. 2, No. 1, A1, 19.12.2015.

Research output: Contribution to journalArticle

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AU - Gillgren, Nathaniel

AU - Wickramaratne, Darshana

AU - Shi, Yanmeng

AU - Espiritu, Tim

AU - Yang, Jiawei

AU - Hu, Jin

AU - Wei, Jiang

AU - Liu, Xue

AU - Mao, Zhiqiang

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Bockrath, Marc

AU - Barlas, Yafis

AU - Lake, Roger K.

AU - Lau, Chun Ning

PY - 2015/12/19

Y1 - 2015/12/19

N2 - As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN(hBN) heterostructures with one-dimensional edge contacts. These transistors are stable in ambient conditions for <300 h, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 cm2 V-1 s-1. At low temperatures, we observe gate-tunable Shubnikov de Haas magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor∼2. The cyclotron mass of few-layer phosphorene (FLP) holes is determined to increase from 0.25 to 0.31me as the Fermi level moves towards the valence band edge. Our results underscore the potential of FLP as both a platform for novel 2D physics and an electronic material for semiconductor applications.

AB - As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN(hBN) heterostructures with one-dimensional edge contacts. These transistors are stable in ambient conditions for <300 h, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 cm2 V-1 s-1. At low temperatures, we observe gate-tunable Shubnikov de Haas magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor∼2. The cyclotron mass of few-layer phosphorene (FLP) holes is determined to increase from 0.25 to 0.31me as the Fermi level moves towards the valence band edge. Our results underscore the potential of FLP as both a platform for novel 2D physics and an electronic material for semiconductor applications.

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