Ge doped GaN with controllable high carrier concentration for plasmonic applications

Ronny Kirste, Marc P. Hoffmann, Edward Sachet, Milena Bobea, Zachary Bryan, Isaac Bryan, Christian Nenstiel, Axel Hoffmann, Jon Paul Maria, Ramón Collazo, Zlatko Sitar

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4 × 1020 cm-3. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500 cm-1 and a surface plasma with an energy around 2000 cm-1. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

Original languageEnglish (US)
Article number242107
JournalApplied Physics Letters
Volume103
Issue number24
DOIs
StatePublished - Dec 9 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Ge doped GaN with controllable high carrier concentration for plasmonic applications'. Together they form a unique fingerprint.

Cite this