Generation and properties of semi-insulating SiC substrates

Shaoping Wang, Adrian Powell, Joan Redwing, Eddie Piner, Adam W. Saxler

Research output: Contribution to journalConference articlepeer-review

Abstract

Semi-insulating SiC crystals were grown by sublimation Physical Vapor Transport technique and semi-insulating 6H-SiC substrate wafers up to 2 inches in diameter were fabricated. Resistivity measurement and high temperature Hall measurement results showed that a large segment of a SiC boule grown in this process was semi-insulating. To evaluate these SI SiC substrates, GaN thin films and device structures were grown on the semi-insulating SiC substrates and device characterization results are presented.

Original languageEnglish (US)
Pages (from-to)I/-
JournalMaterials Science Forum
Volume338
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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