Generation of deep levels in silicon under post-hydrogen-plasma thermal anneal

C. W. Nam, S Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si wafers subject to short-time (4-12 min.), low-temperature atomic hydrogen cleaning in an electron cyclotron resonance (ESR) plasma system have been annealed subsequently in the temperature range 300-750 °C for 20 mins. While only a small broad peak is seen immediately after hydrogenation, several pronounced and distinct majority carrier trap levels show up in deep level transient spectroscopy (DLTS) measurements of subsequently fabricated Schottky diodes on samples annealed at 450 °C and above. These appear to be related to thermal donors, with their formation rate greatly enhanced by the pre-anneal atomic hydrogenation. The concentrations of these levels drop substantially after the 750 °C anneal.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages407-410
Number of pages4
ISBN (Electronic)2863321579
StatePublished - Jan 1 1994
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: Sep 11 1994Sep 15 1994

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period9/11/949/15/94

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Nam, C. W., & Ashok, S. (1994). Generation of deep levels in silicon under post-hydrogen-plasma thermal anneal. In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 407-410). [5435747] (European Solid-State Device Research Conference). IEEE Computer Society.