Generation of deep levels in silicon under posthydrogen-plasma thermal anneal

C. W. Nam, S. Ashok

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Si wafers subject to short-time (4-12 min), low-temperature atomic hydrogen cleaning in an electron-cyclotron-resonance plasma system have been annealed subsequently in the temperature range 300-750°C for 20 min. While only a small broad peak is discernible immediately after hydrogenation, several pronounced and distinct majority-carrier trap levels appear in deep-level transient spectroscopy measurements of subsequently fabricated Schottky diodes on both n- and p-type Si samples annealed at 450°C and above. The concentrations peak at anneal temperatures around 500°C and drop substantially beyond 750°C. This phenomenon appears to be unrelated to the presence of oxygen in Si and is of potential importance in silicon processing technology.

Original languageEnglish (US)
Pages (from-to)2819-2821
Number of pages3
JournalJournal of Applied Physics
Volume77
Issue number6
DOIs
StatePublished - Dec 1 1995

Fingerprint

thermal plasmas
majority carriers
silicon
electron cyclotron resonance
Schottky diodes
cleaning
hydrogenation
traps
wafers
temperature
oxygen
hydrogen
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Nam, C. W. ; Ashok, S. / Generation of deep levels in silicon under posthydrogen-plasma thermal anneal. In: Journal of Applied Physics. 1995 ; Vol. 77, No. 6. pp. 2819-2821.
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Generation of deep levels in silicon under posthydrogen-plasma thermal anneal. / Nam, C. W.; Ashok, S.

In: Journal of Applied Physics, Vol. 77, No. 6, 01.12.1995, p. 2819-2821.

Research output: Contribution to journalArticle

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