Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Thomas Aichinger, Patrick M. Lenahan

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29 Scopus citations

Abstract

We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

Original languageEnglish (US)
Article number083504
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - Aug 20 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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