Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

Thomas Aichinger, Patrick M. Lenahan

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

Original languageEnglish (US)
Article number083504
JournalApplied Physics Letters
Volume101
Issue number8
DOIs
StatePublished - Aug 20 2012

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heterojunctions
transistors
sensitivity
acceleration (physics)
metal oxide semiconductors
data acquisition
magnetic resonance
field effect transistors
oxides
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{7b8dc2ebebed43a1a4a793ad552038e8,
title = "Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect",
abstract = "We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.",
author = "Thomas Aichinger and Lenahan, {Patrick M.}",
year = "2012",
month = "8",
day = "20",
doi = "10.1063/1.4747495",
language = "English (US)",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect. / Aichinger, Thomas; Lenahan, Patrick M.

In: Applied Physics Letters, Vol. 101, No. 8, 083504, 20.08.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Giant amplification of spin dependent recombination at heterojunctions through a gate controlled bipolar effect

AU - Aichinger, Thomas

AU - Lenahan, Patrick M.

PY - 2012/8/20

Y1 - 2012/8/20

N2 - We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

AB - We demonstrate a method for spin dependent recombination (SDR) in metal-oxide-semiconductor-field-effect-transistors which (i) greatly amplifies the spin dependent fraction of the investigated transistor current and (ii) concentrates the sensitivity of the measurement exclusively to the most technologically relevant defects, those at the semiconductor/oxide interface. We demonstrate a gain in sensitivity well in excess of an order of magnitude and a much better resolved spectrum. The boost in sensitivity reduces data acquisition time by orders of magnitude and significantly enhances the analytical power of SDR. The very large amplification effect may also be of interest for magnetic resonance controlled spintronic transistors.

UR - http://www.scopus.com/inward/record.url?scp=84865529739&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865529739&partnerID=8YFLogxK

U2 - 10.1063/1.4747495

DO - 10.1063/1.4747495

M3 - Article

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 083504

ER -