Giant dielectric constant dominated by Maxwell-Wagner relaxation in Al 2 O3 / TiO2 nanolaminates synthesized by atomic layer deposition

Wei Li, Orlando Auciello, Ramesh N. Premnath, Bernd Kabius

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Abstract

Nanolaminates consisting of Al2 O3 and TiO 2 oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant (∼1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al2 O3 and TiO 2 dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell-Wagner type dielectric relaxation.

Original languageEnglish (US)
Article number162907
JournalApplied Physics Letters
Volume96
Issue number16
DOIs
StatePublished - Apr 19 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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