Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti 0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors

Feng Li; Zhao Fang; Rajiv Misra; Srinivas A. Tadigadapa; Qiming Zhang; Suman Datta

doi:10.1109/DRC.2011.5994416

Giant magnetoelectric effect in nanofabricated Pb(Zr_0.52Ti _0.48)O₃-Fe₈₅B₅Si₁₀ cantilevers and resonant gate transistors

Feng Li, Zhao Fang, Rajiv Misra, Srinivas A. Tadigadapa, Qiming Zhang, Suman Datta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr₂O₃, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe ₈₅B₅Si₁₀ (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr_0.52Ti_0.48)O ₃ (PZT)-Fe₈₅B₅Si₁₀ ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.

Original language	English (US)
Title of host publication	69th Device Research Conference, DRC 2011 - Conference Digest
Pages	69-70
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2011.5994416
State	Published - Dec 1 2011
Event	69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States Duration: Jun 20 2011 → Jun 22 2011

Other

Other	69th Device Research Conference, DRC 2011
Country/Territory	United States
City	Santa Barbara, CA
Period	6/20/11 → 6/22/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2011.5994416

Cite this

@inproceedings{fdc8e9cf30394a0082130d128c8c9b4a,

title = "Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti 0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors",

abstract = "Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe 85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O 3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.",

author = "Feng Li and Zhao Fang and Rajiv Misra and Tadigadapa, {Srinivas A.} and Qiming Zhang and Suman Datta",

year = "2011",

month = dec,

day = "1",

doi = "10.1109/DRC.2011.5994416",

language = "English (US)",

isbn = "9781612842417",

pages = "69--70",

booktitle = "69th Device Research Conference, DRC 2011 - Conference Digest",

note = "69th Device Research Conference, DRC 2011 ; Conference date: 20-06-2011 Through 22-06-2011",

}

Li, F, Fang, Z, Misra, R, Tadigadapa, SA, Zhang, Q & Datta, S 2011, Giant magnetoelectric effect in nanofabricated Pb(Zr_0.52Ti _0.48)O₃-Fe₈₅B₅Si₁₀ cantilevers and resonant gate transistors. in 69th Device Research Conference, DRC 2011 - Conference Digest., 5994416, pp. 69-70, 69th Device Research Conference, DRC 2011, Santa Barbara, CA, United States, 6/20/11. https://doi.org/10.1109/DRC.2011.5994416

TY - GEN

T1 - Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti 0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors

AU - Li, Feng

AU - Fang, Zhao

AU - Misra, Rajiv

AU - Tadigadapa, Srinivas A.

AU - Zhang, Qiming

AU - Datta, Suman

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe 85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O 3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.

AB - Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe 85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O 3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=84880757516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880757516&partnerID=8YFLogxK

U2 - 10.1109/DRC.2011.5994416

DO - 10.1109/DRC.2011.5994416

M3 - Conference contribution

AN - SCOPUS:84880757516

SN - 9781612842417

SP - 69

EP - 70

BT - 69th Device Research Conference, DRC 2011 - Conference Digest

T2 - 69th Device Research Conference, DRC 2011

Y2 - 20 June 2011 through 22 June 2011

ER -