Giant magnetoelectric effect in nanofabricated Pb(Zr0.52Ti 0.48)O3-Fe85B5Si10 cantilevers and resonant gate transistors

Feng Li, Zhao Fang, Rajiv Misra, Srinivas A. Tadigadapa, Qiming Zhang, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Magnetoelectric (ME) laminates show higher ME coefficients than that of natural multiferroics (e.g. Cr2O3, BiTiO) by up to several orders of magnitude. Recent studies on bulk ME sensors using Fe 85B5Si10 (Metglas) /polyvinylidene fluoride composite show a high ME voltage coefficient of 21V/cm·Oe at 20 Hz [1]. However, bulk sensors suffer from poor epoxy bonding, aging and difficulty of integration with CMOS electronics. Here, we report, for the first time, the monolithic nanofabrication of Pb(Zr0.52Ti0.48)O 3 (PZT)-Fe85B5Si10 ME cantilevers (Fig.1(a)) on silicon substrate which achieve 0.46 V/cm·Oe at 20 Hz and 1.8 V/cm·Oe at a resonance frequency of 8.4 KHz. Also, ME cantilever based resonant gate transistors (RGT) (Fig.1 (b)) has been designed and analyzed in comparison with ME cantilever. A 10X signal to noise ratio improvement can be reached by ME RGT. This shows the compatibility of the nanofabricated cantilever ME sensors with the Si process technology and paves the way for the future integration of MEMS based ultra-sensitive magnetic sensors with advanced Si nanoelectronics.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Number of pages2
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011


Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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