The application of a small magnetic field (Formula presented) either parallel or perpendicular to a low-density (Formula presented) magnetic two-dimensional electron gas (2DEG) creates a striking positive magnetoresistance of up to 700%. This is a spin effect, caused by the suppression of spin-dependent hopping paths between localized states with on-site correlation. At higher fields, a spin-related delocalization is observed. In the perpendicular field geometry, orbital effects combine with this delocalization and lead to quantum phase transitions between the spin-polarized insulating state and the (Formula presented) quantum Hall liquid.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 1998|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics