Abstract
The application of a small magnetic field (Formula presented) either parallel or perpendicular to a low-density (Formula presented) magnetic two-dimensional electron gas (2DEG) creates a striking positive magnetoresistance of up to 700%. This is a spin effect, caused by the suppression of spin-dependent hopping paths between localized states with on-site correlation. At higher fields, a spin-related delocalization is observed. In the perpendicular field geometry, orbital effects combine with this delocalization and lead to quantum phase transitions between the spin-polarized insulating state and the (Formula presented) quantum Hall liquid.
| Original language | English (US) |
|---|---|
| Pages (from-to) | R4238-R4241 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 58 |
| Issue number | 8 |
| DOIs | |
| State | Published - Jan 1 1998 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Giant magnetoresistance and quantum phase transitions in strongly localized magnetic two-dimensional electron gases. / Smorchkova, I.; Samarth, Nitin; Kikkawa, J.; Awschalom, D.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 58, No. 8, 01.01.1998, p. R4238-R4241.Research output: Contribution to journal › Article
TY - JOUR
T1 - Giant magnetoresistance and quantum phase transitions in strongly localized magnetic two-dimensional electron gases
AU - Smorchkova, I.
AU - Samarth, Nitin
AU - Kikkawa, J.
AU - Awschalom, D.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - The application of a small magnetic field (Formula presented) either parallel or perpendicular to a low-density (Formula presented) magnetic two-dimensional electron gas (2DEG) creates a striking positive magnetoresistance of up to 700%. This is a spin effect, caused by the suppression of spin-dependent hopping paths between localized states with on-site correlation. At higher fields, a spin-related delocalization is observed. In the perpendicular field geometry, orbital effects combine with this delocalization and lead to quantum phase transitions between the spin-polarized insulating state and the (Formula presented) quantum Hall liquid.
AB - The application of a small magnetic field (Formula presented) either parallel or perpendicular to a low-density (Formula presented) magnetic two-dimensional electron gas (2DEG) creates a striking positive magnetoresistance of up to 700%. This is a spin effect, caused by the suppression of spin-dependent hopping paths between localized states with on-site correlation. At higher fields, a spin-related delocalization is observed. In the perpendicular field geometry, orbital effects combine with this delocalization and lead to quantum phase transitions between the spin-polarized insulating state and the (Formula presented) quantum Hall liquid.
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U2 - 10.1103/PhysRevB.58.R4238
DO - 10.1103/PhysRevB.58.R4238
M3 - Article
VL - 58
SP - R4238-R4241
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 8
ER -