Giant magnetoresistance behavior in epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films

G. C. Xiong, Qi Li, H. L. Ju, J. Wu, L. Senapati, R. L. Greene, T. Venkatesan

Research output: Contribution to journalConference article

Abstract

Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106% were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

Original languageEnglish (US)
Pages (from-to)433-438
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume384
StatePublished - Dec 1 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

Fingerprint

Giant magnetoresistance
Magnetoresistance
Thin films
Manganese oxide
manganese oxides
Pulsed laser deposition
thin films
Stoichiometry
Oxide films
pulsed laser deposition
oxide films
stoichiometry
Magnetic fields
Oxygen
preparation
electrical resistivity
oxygen
magnetic fields
manganese oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Xiong, G. C., Li, Q., Ju, H. L., Wu, J., Senapati, L., Greene, R. L., & Venkatesan, T. (1995). Giant magnetoresistance behavior in epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films. Materials Research Society Symposium - Proceedings, 384, 433-438.
Xiong, G. C. ; Li, Qi ; Ju, H. L. ; Wu, J. ; Senapati, L. ; Greene, R. L. ; Venkatesan, T. / Giant magnetoresistance behavior in epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films. In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 384. pp. 433-438.
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abstract = "Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106{\%} were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.",
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Giant magnetoresistance behavior in epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films. / Xiong, G. C.; Li, Qi; Ju, H. L.; Wu, J.; Senapati, L.; Greene, R. L.; Venkatesan, T.

In: Materials Research Society Symposium - Proceedings, Vol. 384, 01.12.1995, p. 433-438.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Giant magnetoresistance behavior in epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films

AU - Xiong, G. C.

AU - Li, Qi

AU - Ju, H. L.

AU - Wu, J.

AU - Senapati, L.

AU - Greene, R. L.

AU - Venkatesan, T.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106% were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

AB - Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106% were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

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M3 - Conference article

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EP - 438

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

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