Researchers report the reversible switching of stable nanoscale charged domain walls (CDWs) and corresponding nanodomains induced by an electric field applied across the cross sectional sample of an epitaxial BiFeO3 thin film, using a recently developed in situ TEM coupled with phase-field simulations. A dramatic resistive switching is observed as the length of the CDW surpasses a critical value, leading to the highest resistance changes ever reported in ferroelectric memories, including ferroelectric tunneling junctions and switchable ferroelectric diodes.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering