Graphene transistors for ambipolar mixing at microwave frequencies

H. Madan, M. J. Hollander, J. A. Robinson, S. Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

This work presents a detailed study of the graphene RF mixer in the ambipolar configuration, using quasi-free-standing epitaxial graphene on SiC. Record high conversion gain is achieved through use of optimized growth and synthesis techniques, metal contact formation, and dielectric materials integration. Hydrogen intercalation is utilized to isolate the graphene from the underlying SiC substrate and improve transport properties. Low contact resistances at the metal-graphene interface are realized using an oxygen plasma pre-treatment, while dielectric seeding is achieved using a direct deposited layer of HfO2 before ALD film growth. Output characteristics of the graphene transistor are analyzed and the effects on mixer performance are explained. A graphene RF transistor is designed with gate length 750nm, width 20μm, and equivalent oxide thickness ∼2.5nm in order to achieve record high conversion gain of -14 and -16dB at LO power 0dBm at 4.2 and 10GHz, respectively, 100× higher than previously reported ambipolar mixing.

Original languageEnglish (US)
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages91-100
Number of pages10
Edition1
DOIs
StatePublished - Oct 21 2013
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 17 2013

Publication series

NameECS Transactions
Number1
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/17/13

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Madan, H., Hollander, M. J., Robinson, J. A., & Datta, S. (2013). Graphene transistors for ambipolar mixing at microwave frequencies. In Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5 (1 ed., pp. 91-100). (ECS Transactions; Vol. 53, No. 1). https://doi.org/10.1149/05301.0091ecst