TY - JOUR
T1 - Growth and characterization of α-Ga2O3on sapphire and nanocrystalline β-Ga2O3on diamond substrates by halide vapor phase epitaxy
AU - Modak, Sushrut
AU - Lundh, James Spencer
AU - Al-Mamun, Nahid Sultan
AU - Chernyak, Leonid
AU - Haque, Aman
AU - Tu, Thieu Quang
AU - Kuramata, Akito
AU - Tadjer, Marko J.
AU - Pearton, Stephen J.
N1 - Funding Information:
The research at the Naval Research Laboratory was supported by the Office of Naval Research. J.S.L. gratefully acknowledges support by the National Research Council Research Associateship Programs. The research at UCF was supported in part by the National Science Foundation (NSF; ECCS Award Nos. 1802208 and 2127916) and in part by the U.S.-Israel Binational Science Foundation (Award No. 2018010) and NATO (Award No. G5748). The work at UF and PSU was performed as part of the Interaction of Ionizing Radiation with Matter University Research Alliance (IIRM-URA ) , sponsored by the Department of the Defense’s Defense Threat Reduction Agency (Award No. HDTRA1-20-2-0002, monitored by Jacob Calkins) and also sponsored by NSF (DMR Award No. 1856662, monitored by J. H. Edgar). A.H. also acknowledges support from NSF (ECCS Award No. 2015795).
Publisher Copyright:
© 2022 Author(s).
PY - 2022/12/1
Y1 - 2022/12/1
N2 - Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
AB - Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
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U2 - 10.1116/6.0002115
DO - 10.1116/6.0002115
M3 - Article
AN - SCOPUS:85143371664
SN - 0734-2101
VL - 40
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
IS - 6
M1 - 062703
ER -