Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

H. Luo, Nitin Samarth, A. Yin, A. Pareek, M. Dobrowolska, J. K. Furdyna, K. Mahalingam, N. Otsuka, F. C. Peiris, J. R. Buschert

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Abstract

We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

Original languageEnglish (US)
Pages (from-to)467-471
Number of pages5
JournalJournal of Electronic Materials
Volume22
Issue number5
DOIs
StatePublished - May 1 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Luo, H., Samarth, N., Yin, A., Pareek, A., Dobrowolska, M., Furdyna, J. K., Mahalingam, K., Otsuka, N., Peiris, F. C., & Buschert, J. R. (1993). Growth and characterization of digital alloy quantum wells of CdSe/ZnSe. Journal of Electronic Materials, 22(5), 467-471. https://doi.org/10.1007/BF02661615