Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

Shujun Zhang, Akira Yoshikawa, Kei Kamada, Eric Frantz, Ru Xia, David W. Snyder, Tsuguo Fukuda, Thomas R. Shrout

Research output: Contribution to journalArticle

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Abstract

La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d11 and electromechanical coupling factor k12 were found to be on the order of 6-7 pC/N and ∼16%, respectively. The resistivity of LNGA was found to be 1.1 × 108 Ω cm at 500 {ring operator}C, much higher than those values of LTGA and LGS (∼ 2.2 × 107 Ω cm for LTGA and ∼ 9 × 106 Ω cm for LGS). The RC time constant of LNGA crystal was found to be 224 μs at 500 {ring operator}C, while the values were 49 μs and 18 μs at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature.

Original languageEnglish (US)
Pages (from-to)213-216
Number of pages4
JournalSolid State Communications
Volume148
Issue number5-6
DOIs
StatePublished - Nov 1 2008

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piezoelectric crystals
Single crystals
single crystals
operators
Crystals
electrical resistivity
Crystal growth from melt
Electromechanical coupling
Czochralski method
rings
Temperature
time constant
crystals
temperature
coefficients
La3Ga5SiO14

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Zhang, Shujun ; Yoshikawa, Akira ; Kamada, Kei ; Frantz, Eric ; Xia, Ru ; Snyder, David W. ; Fukuda, Tsuguo ; Shrout, Thomas R. / Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals. In: Solid State Communications. 2008 ; Vol. 148, No. 5-6. pp. 213-216.
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abstract = "La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d11 and electromechanical coupling factor k12 were found to be on the order of 6-7 pC/N and ∼16{\%}, respectively. The resistivity of LNGA was found to be 1.1 × 108 Ω cm at 500 {ring operator}C, much higher than those values of LTGA and LGS (∼ 2.2 × 107 Ω cm for LTGA and ∼ 9 × 106 Ω cm for LGS). The RC time constant of LNGA crystal was found to be 224 μs at 500 {ring operator}C, while the values were 49 μs and 18 μs at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature.",
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Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals. / Zhang, Shujun; Yoshikawa, Akira; Kamada, Kei; Frantz, Eric; Xia, Ru; Snyder, David W.; Fukuda, Tsuguo; Shrout, Thomas R.

In: Solid State Communications, Vol. 148, No. 5-6, 01.11.2008, p. 213-216.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

AU - Zhang, Shujun

AU - Yoshikawa, Akira

AU - Kamada, Kei

AU - Frantz, Eric

AU - Xia, Ru

AU - Snyder, David W.

AU - Fukuda, Tsuguo

AU - Shrout, Thomas R.

PY - 2008/11/1

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N2 - La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d11 and electromechanical coupling factor k12 were found to be on the order of 6-7 pC/N and ∼16%, respectively. The resistivity of LNGA was found to be 1.1 × 108 Ω cm at 500 {ring operator}C, much higher than those values of LTGA and LGS (∼ 2.2 × 107 Ω cm for LTGA and ∼ 9 × 106 Ω cm for LGS). The RC time constant of LNGA crystal was found to be 224 μs at 500 {ring operator}C, while the values were 49 μs and 18 μs at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature.

AB - La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d11 and electromechanical coupling factor k12 were found to be on the order of 6-7 pC/N and ∼16%, respectively. The resistivity of LNGA was found to be 1.1 × 108 Ω cm at 500 {ring operator}C, much higher than those values of LTGA and LGS (∼ 2.2 × 107 Ω cm for LTGA and ∼ 9 × 106 Ω cm for LGS). The RC time constant of LNGA crystal was found to be 224 μs at 500 {ring operator}C, while the values were 49 μs and 18 μs at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature.

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