Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

A. Kandala, A. Richardella, D. W. Rench, D. M. Zhang, T. C. Flanagan, N. Samarth

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.

Original languageEnglish (US)
Article number202409
JournalApplied Physics Letters
Volume103
Issue number20
DOIs
StatePublished - Nov 11 2013

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retarding
insulators
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices. / Kandala, A.; Richardella, A.; Rench, D. W.; Zhang, D. M.; Flanagan, T. C.; Samarth, N.

In: Applied Physics Letters, Vol. 103, No. 20, 202409, 11.11.2013.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kandala, A.

AU - Richardella, A.

AU - Rench, D. W.

AU - Zhang, D. M.

AU - Flanagan, T. C.

AU - Samarth, N.

PY - 2013/11/11

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