Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

A. Kandala; A. Richardella; D. W. Rench; D. M. Zhang; T. C. Flanagan; N. Samarth

doi:10.1063/1.4831987

Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

A. Kandala, A. Richardella, D. W. Rench, D. M. Zhang, T. C. Flanagan, N. Samarth

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi₂Se₃ and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.

Original language	English (US)
Article number	202409
Journal	Applied Physics Letters
Volume	103
Issue number	20
DOIs	https://doi.org/10.1063/1.4831987
State	Published - Nov 11 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4831987

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@article{52b391ef390d476ab4a38576f638b3f2,

title = "Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices",

abstract = "We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.",

author = "A. Kandala and A. Richardella and Rench, {D. W.} and Zhang, {D. M.} and Flanagan, {T. C.} and N. Samarth",

note = "Funding Information: This work was supported by DARPA (N66001-11-1-4110), ONR (N00014-12-1-0117), and the Pennsylvania State University Materials Research Institute Nanofabrication Lab (ECS-0335765). We are grateful to Ke Wang, Josh Maier, and Trevor Clark for assistance with TEM.",

year = "2013",

month = nov,

day = "11",

doi = "10.1063/1.4831987",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

AU - Kandala, A.

AU - Richardella, A.

AU - Rench, D. W.

AU - Zhang, D. M.

AU - Flanagan, T. C.

AU - Samarth, N.

N1 - Funding Information: This work was supported by DARPA (N66001-11-1-4110), ONR (N00014-12-1-0117), and the Pennsylvania State University Materials Research Institute Nanofabrication Lab (ECS-0335765). We are grateful to Ke Wang, Josh Maier, and Trevor Clark for assistance with TEM.

PY - 2013/11/11

Y1 - 2013/11/11

N2 - We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.

AB - We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.

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SN - 0003-6951

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Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

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