Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

A. Kandala; A. Richardella; D. W. Rench; D. M. Zhang; T. C. Flanagan; N. Samarth

doi:10.1063/1.4831987

Growth and characterization of hybrid insulating ferromagnet-topological insulator heterostructure devices

A. Kandala, A. Richardella, D. W. Rench, D. M. Zhang, T. C. Flanagan, N. Samarth

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi₂Se₃ and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.

Original language	English (US)
Article number	202409
Journal	Applied Physics Letters
Volume	103
Issue number	20
DOIs	https://doi.org/10.1063/1.4831987
State	Published - Nov 11 2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4831987

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abstract = "We report the integration of the insulating ferromagnet GdN with epitaxial films of the topological insulator Bi2Se3 and present detailed structural, magnetic, and transport characterization of the heterostructures. Fabrication of multi-channel Hall bars with bare and GdN-capped sections enable direct comparison of magnetotransport properties. We show that the presence of the magnetic overlayer results in suppression of weak anti-localization at the top surface.",

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AU - Flanagan, T. C.

AU - Samarth, N.

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