TY - JOUR
T1 - Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels
AU - Ranga, Praneeth
AU - Bhattacharyya, Arkka
AU - Chmielewski, Adrian
AU - Roy, Saurav
AU - Sun, Rujun
AU - Scarpulla, Michael A.
AU - Alem, Nasim
AU - Krishnamoorthy, Sriram
N1 - Funding Information:
This material is based upon work supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0507 and monitored by Dr. Ali Sayir. Any opinions, findings, conclusions, or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States Air Force. Praneeth Ranga acknowledges support from University of Utah Graduate Research Fellowship 2020-2021. This work was performed in part at the Utah Nanofab sponsored by the College of Engineering and the Office of the Vice President for Research. The authors thank the Air Force Research Laboratory's Sensors Directorate for their discussions with them. The electron microscopy work was performed in the Materials Characterization lab (MCL) at the Materials Research Institute (MRI) at the Pennsylvania State University. The work at PSU was supported by the AFOSR program FA9550-18-1-0277 (GAME MURI, Dr. Ali Sayir, Program Manager).
Funding Information:
Acknowledgments This material is based upon work supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0507 and monitored by Dr. Ali Sayir. Any opinions, findings, conclusions, or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States Air Force. Praneeth Ranga acknowledges support from University of Utah Graduate Research Fellowship 2020–2021. This work was performed in part at the Utah Nanofab sponsored by the College of Engineering and the Office of the Vice President for Research. The authors thank the Air Force Research Laboratory’s Sensors Directorate for their discussions with them. The electron microscopy work was performed in the Materials Characterization lab (MCL) at the Materials Research Institute (MRI) at the Pennsylvania State University. The work at PSU was supported by the AFOSR program FA9550-18-1-0277 (GAME MURI, Dr. Ali Sayir, Program Manager).
Publisher Copyright:
© 2021 The Japan Society of Applied Physics
PY - 2021/2
Y1 - 2021/2
N2 - We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3
AB - We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3
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U2 - 10.35848/1882-0786/abd675
DO - 10.35848/1882-0786/abd675
M3 - Article
AN - SCOPUS:85100386754
SN - 1882-0778
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
IS - 2
M1 - 025501
ER -