Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1−x)2O3/β-Ga2O3 heterostructure channels

Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy

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We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(AlxGa1x)2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(AlxGa1-x)2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on-off ratio of 8 × 106. A sheet resistance of 5.3 kΩ/square is measured at room temperature, which includes contribution from a parallel channel in β-(AlxGa1-x)2O3

Original languageEnglish (US)
Article number025501
JournalApplied Physics Express
Issue number2
StatePublished - Feb 2021

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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