Growth and characterization of Zn1-xMnxSe1-ySy epilayers and related heterostructures

F. S. Flack, Nitin Samarth, F. Semendy

Research output: Contribution to journalArticle

Abstract

We describe the growth of (Zn,Mn)(S,Se) epitaxial layers of high structural quality on (100) GaAs substrates. Double crystal x-ray diffraction (DCXRD) measurements indicate that quatenary epilayers nearly lattice-matched with GaAs are characterized by DCXRD curves with a full width at half maximum in the range 30 - 60 arc seconds. Photoluminescence (PL) spectroscopy is employed to map the variation of the energy gap of the quatenary alloys over a wide range of alloy compositions. Finally, temperature dependent PL is used to examine the viability of (Zn,Mn)(S,Se) alloys as confining layers for ZnSe and (Zn,Cd)Se quantum wells. While efficient exciton confinement is demonstrated through the observation of robust PL from such quantum wells up to high temperatures, the renormalization of the quatenary band gap by spin fluctuations leads to a rapid decrease in confinement with increase in temperature.

Original languageEnglish (US)
Pages (from-to)293-298
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume452
StatePublished - 1997

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Epilayers
Heterojunctions
photoluminescence
Semiconductor quantum wells
Photoluminescence
Energy gap
x ray diffraction
Diffraction
quantum wells
Spin fluctuations
X rays
Crystals
Photoluminescence spectroscopy
Epitaxial layers
Full width at half maximum
viability
Crystal lattices
Excitons
confining
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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abstract = "We describe the growth of (Zn,Mn)(S,Se) epitaxial layers of high structural quality on (100) GaAs substrates. Double crystal x-ray diffraction (DCXRD) measurements indicate that quatenary epilayers nearly lattice-matched with GaAs are characterized by DCXRD curves with a full width at half maximum in the range 30 - 60 arc seconds. Photoluminescence (PL) spectroscopy is employed to map the variation of the energy gap of the quatenary alloys over a wide range of alloy compositions. Finally, temperature dependent PL is used to examine the viability of (Zn,Mn)(S,Se) alloys as confining layers for ZnSe and (Zn,Cd)Se quantum wells. While efficient exciton confinement is demonstrated through the observation of robust PL from such quantum wells up to high temperatures, the renormalization of the quatenary band gap by spin fluctuations leads to a rapid decrease in confinement with increase in temperature.",
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Growth and characterization of Zn1-xMnxSe1-ySy epilayers and related heterostructures. / Flack, F. S.; Samarth, Nitin; Semendy, F.

In: Materials Research Society Symposium - Proceedings, Vol. 452, 1997, p. 293-298.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and characterization of Zn1-xMnxSe1-ySy epilayers and related heterostructures

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AU - Samarth, Nitin

AU - Semendy, F.

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AB - We describe the growth of (Zn,Mn)(S,Se) epitaxial layers of high structural quality on (100) GaAs substrates. Double crystal x-ray diffraction (DCXRD) measurements indicate that quatenary epilayers nearly lattice-matched with GaAs are characterized by DCXRD curves with a full width at half maximum in the range 30 - 60 arc seconds. Photoluminescence (PL) spectroscopy is employed to map the variation of the energy gap of the quatenary alloys over a wide range of alloy compositions. Finally, temperature dependent PL is used to examine the viability of (Zn,Mn)(S,Se) alloys as confining layers for ZnSe and (Zn,Cd)Se quantum wells. While efficient exciton confinement is demonstrated through the observation of robust PL from such quantum wells up to high temperatures, the renormalization of the quatenary band gap by spin fluctuations leads to a rapid decrease in confinement with increase in temperature.

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