We describe the growth of (Zn,Mn)(S,Se) epitaxial layers of high structural quality on (100) GaAs substrates. Double crystal x-ray diffraction (DCXRD) measurements indicate that quatenary epilayers nearly lattice-matched with GaAs are characterized by DCXRD curves with a full width at half maximum in the range 30 - 60 arc seconds. Photoluminescence (PL) spectroscopy is employed to map the variation of the energy gap of the quatenary alloys over a wide range of alloy compositions. Finally, temperature dependent PL is used to examine the viability of (Zn,Mn)(S,Se) alloys as confining layers for ZnSe and (Zn,Cd)Se quantum wells. While efficient exciton confinement is demonstrated through the observation of robust PL from such quantum wells up to high temperatures, the renormalization of the quatenary band gap by spin fluctuations leads to a rapid decrease in confinement with increase in temperature.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1997|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials