Growth and high-temperature electromechanical properties of Ca3 NbX3 Si2 O14 (X = Ga and Al) piezoelectric crystals

Shujun Zhang, Haikuan Kong, Ru Xia, Yanqing Zheng, Jun Xin, Thomas R. Shrout

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Piezoelectric single crystals of Ca3NbX3Si2O14 (CNXS, X=Ga and Al) with ordered langasite structure were successfully grown using the Czochralski technique. The structure was analyzed by X-ray powder diffraction, and the lattice parameters for CNAS were found to decrease slightly when compared to CNGS, due to the smaller ion radius of Al. The dielectric, piezoelectric and electromechanical properties were studied as function of temperature from 30 {ring operator}C to 900 {ring operator}C, showing a stable temperature-dependent behavior. Of particular significant is their high mechanical quality factor and electrical resistivity at elevated temperature, demonstrating CNXS crystals to be promising candidates for high-temperature applications.

Original languageEnglish (US)
Pages (from-to)435-438
Number of pages4
JournalSolid State Communications
Volume150
Issue number9-10
DOIs
StatePublished - Mar 1 2010

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Growth and high-temperature electromechanical properties of Ca<sub>3</sub> NbX<sub>3</sub> Si<sub>2</sub> O<sub>14</sub> (X = Ga and Al) piezoelectric crystals'. Together they form a unique fingerprint.

Cite this