Growth and high temperature properties of Ca3Ta(Al0.9Ga0.1)3Si2O14crystals with ordered langasite structure

Kainan Xiong, Yanqing Zheng, Xiaoniu Tu, Shujun Zhang, Haikuan Kong, Erwei Shi

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A bulk of single crystals Ca3Ta(Al0.9Ga0.1)3Si2O14(CTAGS) with ordered langasite structure in which 90% of gallium was replaced by aluminum was successfully grown by the Czochralski technique. X-ray power diffraction (XRPD) studies confirm that the CTAGS crystals possess a langasite structure. The lattice parameters are a=8.053 Å, c=4.938 Å, and V=277.36 Å3. High resolution X-ray diffraction (HRXRD) analysis demonstrates that CTAGS single crystals are free of low-angle boundaries. The piezoelectric coefficient d11, dielectric constant ε110, dielectric loss electromechanical coupling factor k12, mechanical quality factor Q and electric resistivity of X-cut plate of CTAGS were measured from room temperature up to 900 °C. d11, ε110and s11E were found to increase from 3.99 pC/N to 5.67 pC/N, from 13.7 to 15.4 and from 7.92 pm2/N to 8.87 pm2/N, respectively. In addition, the as-growth crystal is transparent in the wavelength range of 300-3200 nm and the highest transmittance exceeds 90%.

Original languageEnglish (US)
Pages (from-to)820-823
Number of pages4
JournalJournal of Crystal Growth
StatePublished - Sep 1 2014

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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