Growth and piezoelectric properties of Pb(Yb 1/2Nb 1/2)O 3-PbTiO 3 epitaxial films

Takeshi Yoshimura, Susan E. Trolier-McKinstry

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19 Scopus citations

Abstract

Epitaxial films of (1-x)Pb(Yb 1/2Nb 1/2)O 3-xPbTiO 3 (PYbN-PT, x=0.4,0.5) with SrRuO 3 bottom electrodes were prepared on (100)LaAlO 3, (100)SrTiO 3, and (111)SrTiO 3 substrates by pulsed laser deposition. It was found that vacuum annealing of the SrRuO 3 before the deposition of PYbN-PT facilitated growth of perovskite PYbN-PT. With optimized growth conditions, (001) and (111) PYbN-PT epitaxial films with good phase purity were obtained in a range of 650-660 and 600-620 °C, respectively. The ferroelectric and transverse piezoelectric properties of these PYbN-PT films were investigated. In the (001) PYbN-PT (50/50) film, the highest remanent polarization (∼30μC/cm 2) and e 31,f piezoelectric coefficient (-14C/m 2) were observed. The transition temperature of the (001) PYbN-PT (50/50) film was near 380 °C.

Original languageEnglish (US)
Pages (from-to)3979-3984
Number of pages6
JournalJournal of Applied Physics
Volume92
Issue number7
DOIs
StatePublished - Oct 1 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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