Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires

Robert A. Burke, Daniel R. Lamborn, Xiaojun Weng, Joan Marie Redwing

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A combination of experimental and computational fluid dynamics-based reactor modeling studies were utilized to study the effects of process conditions on GaN nanowire growth by metalorganic chemical vapor deposition (MOCVD) in an isothermal tube reactor. The GaN nanowires were synthesized on (0 0 0 1) sapphire substrates using nickel thin films as a catalyst. GaN nanowire growth was observed over a furnace temperature range of 800-900 °C at V/III ratios ranging from 33 to 67 and was found to be strongly dependent on the position of the substrate relative to the group III inlet tube. The modeling studies revealed that nanowire growth consistently occurred in a region in the reactor where the GaN thin-film deposition rate was reduced and the gas phase consisted primarily of intermediate species produced by the reaction and decomposition of trimethylgallium-ammonia adduct compounds. The GaN nanowires exhibited a predominant [1 1 2̄ 0] growth direction. Photoluminescence measurements revealed an increase in the GaN near-band edge emission intensity and a reduction in the deep-level yellow luminescence with increasing growth temperature and V/III ratio.

Original languageEnglish (US)
Pages (from-to)3409-3416
Number of pages8
JournalJournal of Crystal Growth
Volume311
Issue number13
DOIs
StatePublished - Jun 15 2009

All Science Journal Classification (ASJC) codes

  • Inorganic Chemistry
  • Materials Chemistry
  • Condensed Matter Physics

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