Growth and properties of (001) BiScO3-PbTiO3 epitaxial films

Takeshi Yoshimura, Susan E. Trolier-McKinstry

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Abstract

The ferroelectric and piezoelectric properties of (001) BiScO 3-PbTiO3 epitaxial films were investigated. Epitaxial films 1 μm thick were grown by pulsed laser deposition using ceramic targets of (1-x)BiScO3-xPbTiO3 (x=0.5) at substrate temperatures of 700°C on (100) SrRuO3/(100)LaAlO3 substrates. Well-saturated hysteresis loops with a remanent polarization of 36 μC/cm 2 were observed. The films had a room temperature dielectric constant of 800, tanδ=0.09 and a maximum permittivity of 3600 at 460°C. The room temperature e31f piezoelectric coefficient was -9 C/m 2. The piezoelectric properties obtained were comparable to those of Pb(Zr,Ti)O3 or relaxor ferroelectric-PbTiO3 films.

Original languageEnglish (US)
Pages (from-to)2065-2066
Number of pages2
JournalApplied Physics Letters
Volume81
Issue number11
DOIs
Publication statusPublished - Sep 9 2002

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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