Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films

S. W. Ko, H. G. Yeo, S. Trolier-Mckinstry

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21 Scopus citations

Abstract

The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.

Original languageEnglish (US)
Article number162901
JournalApplied Physics Letters
Volume95
Issue number16
DOIs
StatePublished - Nov 2 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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