Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films

S. W. Ko, H. G. Yeo, S. Trolier-Mckinstry

Research output: Contribution to journalArticle

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Abstract

The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.

Original languageEnglish (US)
Article number162901
JournalApplied Physics Letters
Volume95
Issue number16
DOIs
StatePublished - Nov 2 2009

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thin films
tangents
dielectric loss
dielectric properties
seeds
transition temperature
permittivity
silicon
room temperature
polarization
coefficients

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films",
abstract = "The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2{\%}. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.",
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Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films. / Ko, S. W.; Yeo, H. G.; Trolier-Mckinstry, S.

In: Applied Physics Letters, Vol. 95, No. 16, 162901, 02.11.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth and properties of chemical solution deposited BiInO3 - PbTiO3 films

AU - Ko, S. W.

AU - Yeo, H. G.

AU - Trolier-Mckinstry, S.

PY - 2009/11/2

Y1 - 2009/11/2

N2 - The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.

AB - The dielectric, ferroelectric, and piezoelectric properties of chemical solution deposited x BiInO3 - (1-x) PbTiO3 (0.10x0.35) thin films on platinized silicon substrates were investigated. Using a PbTiO3 seed layer, phase pure x BiInO3 - (1-x) PbTiO 3 (0.10x0.35) thin films were prepared. For a 470 nm thick 0.15 BiInO3 -0.85 PbTiO3 film, the room temperature permittivity was 650, while the dielectric loss tangent was below 2%. The coercive field and remanent polarization were 73 kV/cm and 22 μC/ cm 2, respectively. The ferroelectric transition temperatures of the x BiInO3 - (1-x) PbTiO3 (x=0.10-0.20) films were all in excess of 550°C. For x=0.15, the e31,f piezoelectric coefficient was -2.7 C/ m2.

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